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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAT18 Band-switching diode Product specification Supersedes data of April 1991 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode FEATURES * Continuous reverse voltage: max. 35 V * Continuous forward current: max. 100 mA * Low diode capacitance: max. 1.0 pF * Low diode forward resistance: max. 0.7 . APPLICATION * Band switching. 3 Marking code: A2. handbook, halfpage 2 BAT18 DESCRIPTION Planar high performance band-switching diode in a small rectangular plastic SOT23 SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode 1 2 n.c. 3 MAM185 1 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. - - -55 - MAX. 35 100 +125 125 V mA C C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 60 C Cd rD diode capacitance diode forward resistance f = 1 MHz; VR = 20 V; see Fig.4 IF = 5 mA; f = 200 MHz; see Fig.5 - - 0.8 0.5 100 1 1.0 0.7 nA A pF CONDITIONS IF = 100 mA; see Fig.2 TYP. - MAX. 1.2 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 2 PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 330 500 UNIT K/W K/W Philips Semiconductors Product specification Band-switching diode GRAPHICAL DATA MBG312 BAT18 handbook, halfpage (1) (2) (3) 100 10 5 handbook, halfpage IR (nA) 10 4 MBG311 IF (mA) 10 3 50 10 2 10 1 10 -1 0 50 100 Tj ( o C) 150 0 0 0.5 1 V F (V) 1.5 (1) Tj = 60 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. VR = 20 V. Solid line: maximum values. Dotted line: typical values. Fig.2 Forward current as a function of forward voltage. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 1.5 MBG313 handbook, halfpage 2 MBG314 Cd (pF) 1 rD () 1 0.5 0 -1 10 1 10 VR (V) 10 2 0 1 10 IF (mA) 10 2 f = 1 MHz; Tj = 25 C. f = 200 MHz; Tj = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. Fig.5 Diode forward resistance as a function of forward current; typical values. 1996 Mar 13 3 Philips Semiconductors Product specification Band-switching diode PACKAGE OUTLINE BAT18 book, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.6 SOT23. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Mar 13 4 |
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